XPS and XRD investigations of Dy/Si interface

The interaction of dysprosium metal atoms with silicon (111) surface at different temperatures has been investigated using X-ray photoelectron spectroscopy and X-ray diffraction analysis. Si 2p and Dy 3d 5 2 spectral lines are used to propose the DySi interaction in the interface region. Even at room temperature (300 K) strong interaction between Dy and Si atoms takes place due to charge transfer from Dy to Si. At this temperature, at the interface, a predominantly Dy-rich Dy 5Si 3 phase is observed. Whereas at an annealing temperature of 623 K a silicon-rich DySi 2 − x phase is observed. At an intermediate temperature of 423 K both these phases are seen with some amorphous background.