Characterization of ion-plated silicon nitride thin films

Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Surface & coatings technology 1992-04, Vol.52 (2), p.187-193
Hauptverfasser: Ramm, Juergen, Pixley, Ralph E.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 193
container_issue 2
container_start_page 187
container_title Surface & coatings technology
container_volume 52
creator Ramm, Juergen
Pixley, Ralph E.
description Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the process conditions. The adherence of the layers is illustrated by X-ray rocking curve measurements. Tests prove the excellent corrosion resistance Si 3N 4 coatings for metallic substrates.
doi_str_mv 10.1016/0257-8972(92)90045-C
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25565580</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>025789729290045C</els_id><sourcerecordid>25565580</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-ef7d934738bba4a18f95db9623fe9db5f69907925a3daf15c3000a62d06a25fa3</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK7-Aw89iOihmo8mbS6CFL9gwYuewzQfbKTbrklW0F-_KbvsURgYGJ55550XoUuC7wgm4h5TXpeNrOmNpLcS44qX7RGakaaWJWNVfYxmB-QUncX4hTEmtaxmSLZLCKCTDf4Pkh-HYnRFbuW6h2RNEX3vdZ4OPgVvbJGWfiic71fxHJ046KO92Pc5-nx--mhfy8X7y1v7uCg1E1UqrauNzB5Y03VQAWmc5KaTgjJnpem4E1LiWlIOzIAjXLPsDQQ1WADlDtgcXe9012H83tiY1MpHbfseBjtuoqKcC84bnMFqB-owxhisU-vgVxB-FcFqyklNIagpBCVzTTmpNq9d7fUhauhdgEH7eNjlVDSkIRl72GE2__rjbVBReztoa3ywOikz-v_vbAF83Xu0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25565580</pqid></control><display><type>article</type><title>Characterization of ion-plated silicon nitride thin films</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Ramm, Juergen ; Pixley, Ralph E.</creator><creatorcontrib>Ramm, Juergen ; Pixley, Ralph E.</creatorcontrib><description>Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the process conditions. The adherence of the layers is illustrated by X-ray rocking curve measurements. Tests prove the excellent corrosion resistance Si 3N 4 coatings for metallic substrates.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/0257-8972(92)90045-C</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Exact sciences and technology ; Metals. Metallurgy ; Nonmetallic coatings ; Production techniques ; Surface treatment</subject><ispartof>Surface &amp; coatings technology, 1992-04, Vol.52 (2), p.187-193</ispartof><rights>1992</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-ef7d934738bba4a18f95db9623fe9db5f69907925a3daf15c3000a62d06a25fa3</citedby><cites>FETCH-LOGICAL-c364t-ef7d934738bba4a18f95db9623fe9db5f69907925a3daf15c3000a62d06a25fa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0257-8972(92)90045-C$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5268181$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ramm, Juergen</creatorcontrib><creatorcontrib>Pixley, Ralph E.</creatorcontrib><title>Characterization of ion-plated silicon nitride thin films</title><title>Surface &amp; coatings technology</title><description>Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the process conditions. The adherence of the layers is illustrated by X-ray rocking curve measurements. Tests prove the excellent corrosion resistance Si 3N 4 coatings for metallic substrates.</description><subject>Applied sciences</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Nonmetallic coatings</subject><subject>Production techniques</subject><subject>Surface treatment</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-Aw89iOihmo8mbS6CFL9gwYuewzQfbKTbrklW0F-_KbvsURgYGJ55550XoUuC7wgm4h5TXpeNrOmNpLcS44qX7RGakaaWJWNVfYxmB-QUncX4hTEmtaxmSLZLCKCTDf4Pkh-HYnRFbuW6h2RNEX3vdZ4OPgVvbJGWfiic71fxHJ046KO92Pc5-nx--mhfy8X7y1v7uCg1E1UqrauNzB5Y03VQAWmc5KaTgjJnpem4E1LiWlIOzIAjXLPsDQQ1WADlDtgcXe9012H83tiY1MpHbfseBjtuoqKcC84bnMFqB-owxhisU-vgVxB-FcFqyklNIagpBCVzTTmpNq9d7fUhauhdgEH7eNjlVDSkIRl72GE2__rjbVBReztoa3ywOikz-v_vbAF83Xu0</recordid><startdate>19920430</startdate><enddate>19920430</enddate><creator>Ramm, Juergen</creator><creator>Pixley, Ralph E.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19920430</creationdate><title>Characterization of ion-plated silicon nitride thin films</title><author>Ramm, Juergen ; Pixley, Ralph E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-ef7d934738bba4a18f95db9623fe9db5f69907925a3daf15c3000a62d06a25fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Exact sciences and technology</topic><topic>Metals. Metallurgy</topic><topic>Nonmetallic coatings</topic><topic>Production techniques</topic><topic>Surface treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ramm, Juergen</creatorcontrib><creatorcontrib>Pixley, Ralph E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface &amp; coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ramm, Juergen</au><au>Pixley, Ralph E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of ion-plated silicon nitride thin films</atitle><jtitle>Surface &amp; coatings technology</jtitle><date>1992-04-30</date><risdate>1992</risdate><volume>52</volume><issue>2</issue><spage>187</spage><epage>193</epage><pages>187-193</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the process conditions. The adherence of the layers is illustrated by X-ray rocking curve measurements. Tests prove the excellent corrosion resistance Si 3N 4 coatings for metallic substrates.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0257-8972(92)90045-C</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0257-8972
ispartof Surface & coatings technology, 1992-04, Vol.52 (2), p.187-193
issn 0257-8972
1879-3347
language eng
recordid cdi_proquest_miscellaneous_25565580
source ScienceDirect Journals (5 years ago - present)
subjects Applied sciences
Exact sciences and technology
Metals. Metallurgy
Nonmetallic coatings
Production techniques
Surface treatment
title Characterization of ion-plated silicon nitride thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T18%3A08%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%20ion-plated%20silicon%20nitride%20thin%20films&rft.jtitle=Surface%20&%20coatings%20technology&rft.au=Ramm,%20Juergen&rft.date=1992-04-30&rft.volume=52&rft.issue=2&rft.spage=187&rft.epage=193&rft.pages=187-193&rft.issn=0257-8972&rft.eissn=1879-3347&rft.coden=SCTEEJ&rft_id=info:doi/10.1016/0257-8972(92)90045-C&rft_dat=%3Cproquest_cross%3E25565580%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25565580&rft_id=info:pmid/&rft_els_id=025789729290045C&rfr_iscdi=true