Characterization of ion-plated silicon nitride thin films

Characterization of ion-plated silicon nitride thin films

Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the p...

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Veröffentlicht in:Surface & coatings technology 1992-04, Vol.52 (2), p.187-193
Hauptverfasser: Ramm, Juergen, Pixley, Ralph E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Exact sciences and technology
Metals. Metallurgy
Nonmetallic coatings
Production techniques
Surface treatment
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Zusammenfassung:Silicon nitride (Si 3N 4) thin films deposited at low (300 °C or below) substrate temperatures by an ion plating process are characterized. Amorphous, stoichiometric layers with hydrogen contents below 1 at.% are obtained. The microhardness is measured and the stress in the films is related to the process conditions. The adherence of the layers is illustrated by X-ray rocking curve measurements. Tests prove the excellent corrosion resistance Si 3N 4 coatings for metallic substrates.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(92)90045-C