Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold

Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold

Simulations of drain current and intrinsic gate capacitances of nMOS/GAA transistors are presented and compared with experimental results. On the basis of the insight they give into the unique behaviour of those devices, new hypotheses have emerged and yielded an analytical model valid around the th...

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Veröffentlicht in:Microelectronic engineering 1992, Vol.19 (1), p.815-818
Hauptverfasser: Francis, P., Terao, A., Flandre, D., Van de Wiele, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:Simulations of drain current and intrinsic gate capacitances of nMOS/GAA transistors are presented and compared with experimental results. On the basis of the insight they give into the unique behaviour of those devices, new hypotheses have emerged and yielded an analytical model valid around the threshold voltage.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90551-2