Exoelectron emission and defects in ferroelectric crystals
Exoelectron emission is used to distinguish between the direct and indirect influence of defects on the properties of ferroelectric crystals. These effects are studied in para-phase in crystals of L- alpha alanine doped TGS. Indirect effects occur when the defects are not active emission centers, wh...
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Veröffentlicht in: | Crystal research and technology (1979) 1989-11, Vol.24 (11), p.1137-1141 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Exoelectron emission is used to distinguish between the direct and indirect influence of defects on the properties of ferroelectric crystals. These effects are studied in para-phase in crystals of L- alpha alanine doped TGS. Indirect effects occur when the defects are not active emission centers, whereas when the centers are active, direct influence are observed. These observations are possible because the defects and internal bias field, E sub b , due to them affect the phase transitions and switching processes, change the dielectric constant, conductivity and pyroelectric coefficient. These effects are demonstrated on a series of ADTGSP single crystals. Graphs. 11 ref.--R.A.S. |
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ISSN: | 0232-1300 1521-4079 |
DOI: | 10.1002/crat.2170241110 |