Titanium dioxide dielectric films formed by rapid thermal oxidation

High dielectric constant titanium dioxide thin films have been formed on silicon substrates by the rapid thermal oxidation of evaporated titanium. Oxidation of titanium at temperatures between 450 and 800 °C for periods of 1–60 s has been studied. Rutile polycrystalline layers of 800–2000 Å thickness were formed. Dielectric constants were in the range of 58–77 for titanium dioxide on silicon. High oxidization temperatures gave leakage currents of 10−7 A at 0.3 MV cm−1 for a 1500-Å-thick layer, and potential is seen for improved results with thinner layers.