Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

In the subtractive X-ray mask fabrication process, suppressing distortions introduced in the bulk-Si etching step is of the utmost importance. Influences of absorber and membrane stresses on mask distortions were investigated in order to obtain good position accuracy. The required stress conditions...

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Veröffentlicht in:Japanese Journal of Applied Physics 1989-10, Vol.28 (10R), p.2074-2079
Hauptverfasser: Ohki, Shigehisa, Kakuchi, Masami, Matsuda, Tadahito, Ozawa, Akira, Ohkubo, Takashi, Oda, Masatoshi, Yoshihara, Hideo
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container_end_page 2079
container_issue 10R
container_start_page 2074
container_title Japanese Journal of Applied Physics
container_volume 28
creator Ohki, Shigehisa
Kakuchi, Masami
Matsuda, Tadahito
Ozawa, Akira
Ohkubo, Takashi
Oda, Masatoshi
Yoshihara, Hideo
description In the subtractive X-ray mask fabrication process, suppressing distortions introduced in the bulk-Si etching step is of the utmost importance. Influences of absorber and membrane stresses on mask distortions were investigated in order to obtain good position accuracy. The required stress conditions in order to suppress absorber- and membrane-stress-induced distortions are
doi_str_mv 10.1143/JJAP.28.2074
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title Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs
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