Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIs

In the subtractive X-ray mask fabrication process, suppressing distortions introduced in the bulk-Si etching step is of the utmost importance. Influences of absorber and membrane stresses on mask distortions were investigated in order to obtain good position accuracy. The required stress conditions...

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Veröffentlicht in:Japanese Journal of Applied Physics 1989-10, Vol.28 (10R), p.2074-2079
Hauptverfasser: Ohki, Shigehisa, Kakuchi, Masami, Matsuda, Tadahito, Ozawa, Akira, Ohkubo, Takashi, Oda, Masatoshi, Yoshihara, Hideo
Format: Artikel
Sprache:eng
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Zusammenfassung:In the subtractive X-ray mask fabrication process, suppressing distortions introduced in the bulk-Si etching step is of the utmost importance. Influences of absorber and membrane stresses on mask distortions were investigated in order to obtain good position accuracy. The required stress conditions in order to suppress absorber- and membrane-stress-induced distortions are
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.2074