Thermal design studies of high-power heterojunction bipolar transistors

A theoretical thermoelectro-feedback model has been developed for the thermal design of high-power GaAlAs/GaAs heterojunction bipolar transistors (HBTs). The power-handling capability, thermal instability, junction temperature, and current distributions of HBTs with multiple emitter fingers have bee...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-05, Vol.36 (5), p.854-863
Hauptverfasser:	Guang-Bo Gao, Ming-Zhu Wang, Xiang Gui, Morkoc, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Current distribution Electronics Exact sciences and technology Fingers Gallium arsenide Geometry Heterojunction bipolar transistors Indium phosphide Millimeter wave technology Other multijunction devices. Power transistors. Thyristors Power dissipation Power transistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature distribution
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