Ten-nanometer resolution nanolithography using newly developed 50-kV electron beam direct writing system

A high energy 50-kV electron beam direct writing system which has a gas introduction line has been developed. Several aspects of the performance of this system are demonstrated. The electron beam size has been improved to be less than 5 nm. 10-nm width line patterns with 50-nm periods in PMMA resist...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1991-11, Vol.30 (11B), p.3266-3271
Hauptverfasser: OCHIAI, Y, BABA, M, WATANABE, H, MATSUI, S
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A high energy 50-kV electron beam direct writing system which has a gas introduction line has been developed. Several aspects of the performance of this system are demonstrated. The electron beam size has been improved to be less than 5 nm. 10-nm width line patterns with 50-nm periods in PMMA resist on a thick Si substrate are demonstrated. It is observed that fewer proximity effects occur when a high-energy electron beam is used. 20-nm-width lines and 20-nm-diameter Au-Pd metal patterns have been fabricated by a lift-off method. 14-nm-diameter carbon dot patterns were deposited on a Si substrate by electron-beam-induced deposition using Styrene gas.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.3266