On-chip four-mode (de-)multiplexer on thin film lithium niobate–silicon rich nitride hybrid platform

A four-mode (de-)multiplexer with transverse electric field light ( T E 0 − T E 3 ) is experimentally demonstrated on a thin film lithium niobate–silicon rich nitride hybrid platform. Enabled by cascaded asymmetrical directional couplers, a (de-)multiplexer with low insertion loss (0.38 dB to 1.6 dB) and low cross talk ( − 18.46 d B to − 20.43 d B ) is obtained at 1550 nm. All channels have cross talk < − 16 d B from 1480 nm to 1580 nm. The transmission of 4 × 50 Gbps on–off keying signals is experimentally achieved on the proposed (de-)multiplexer. Experimental results show that the proposed (de-)multiplexer is a promising approach to enhance the transmission capacity in thin film lithium niobate based photonics integrated circuits.