Signatures of Wigner crystal of electrons in a monolayer semiconductor
When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two-dimensional systems are predicted to spontaneously break continuous-translation symmetry and form a quantum crystal 1 . Efforts to observe 2 – 12 this elusive state of matter, termed a Wigner crystal,...
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Veröffentlicht in: | Nature (London) 2021-07, Vol.595 (7865), p.53-57 |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two-dimensional systems are predicted to spontaneously break continuous-translation symmetry and form a quantum crystal
1
. Efforts to observe
2
–
12
this elusive state of matter, termed a Wigner crystal, in two-dimensional extended systems have primarily focused on conductivity measurements on electrons confined to a single Landau level at high magnetic fields. Here we use optical spectroscopy to demonstrate that electrons in a monolayer semiconductor with density lower than 3 × 10
11
per centimetre squared form a Wigner crystal. The combination of a high electron effective mass and reduced dielectric screening enables us to observe electronic charge order even in the absence of a moiré potential or an external magnetic field. The interactions between a resonantly injected exciton and electrons arranged in a periodic lattice modify the exciton bandstructure so that an umklapp resonance arises in the optical reflection spectrum, heralding the presence of charge order
13
. Our findings demonstrate that charge-tunable transition metal dichalcogenide monolayers
14
enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy.
The signature of a Wigner crystal—the analogue of a solid phase for electrons—is observed via the optical reflection spectrum in a monolayer transition metal dichalcogenide. |
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ISSN: | 0028-0836 1476-4687 |
DOI: | 10.1038/s41586-021-03590-4 |