Resonantly enhanced electron tunneling rates in quantum wells

Resonant tunneling of electrons in GaAs/AlGaAs quantum wells is resolved by picosecond pump-and-probe electroabsorption measurements. Temp.-independent tunneling escape times are affected by the applied electric field, with a pronounced min. at the field corresponding to the resonance between the n#...

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Veröffentlicht in:	Physical review letters 1989-07, Vol.63 (4), p.438-441
Hauptverfasser:	LIVESCU, G, FOX, A. M, MILLER, D. A. B, SIZER, T, KNOX, W. H, GOSSARD, A. C, ENGLISH, J. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Beschreibung
Zusammenfassung:	Resonant tunneling of electrons in GaAs/AlGaAs quantum wells is resolved by picosecond pump-and-probe electroabsorption measurements. Temp.-independent tunneling escape times are affected by the applied electric field, with a pronounced min. at the field corresponding to the resonance between the n#1=1 electron level in one quantum well and the n#1=2 electron level in the adjacent one. Calculated field dependence of tunneling times is in qualitative agreement with the data.
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.63.438