Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI super(2)L technology

Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI super(2)L technology

A process has been demonstrated that integrates isolated emitter HBT's with common emitter HBT's in an emitter-down epi structure on n super(+) substrates. Overgrowth of the epi onto a p super(-) implanted region results in back-to-back diodes for similar to 12-V vertical isolation. Isolat...

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Veröffentlicht in:IEEE electron device letters 1989-01, Vol.10 (11), p.508-510
Hauptverfasser: Plumton, D L, Chang, C T M, Woods, B O
Format: Artikel
Sprache:eng
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Zusammenfassung:A process has been demonstrated that integrates isolated emitter HBT's with common emitter HBT's in an emitter-down epi structure on n super(+) substrates. Overgrowth of the epi onto a p super(-) implanted region results in back-to-back diodes for similar to 12-V vertical isolation. Isolated transistors are used in emitter-follower output buffers for heterojunction integrated injection logic (HI super(2)L) ring oscillators demonstrating the integration of the two transistor types.
ISSN:0741-3106