Reduction of sidegating in GaAs analog and digital circuits using a new buffer layer

Sidegating effects relevant to GaAs digital, analog, and monolithic microwave integrated circuits have been significantly reduced or eliminated by using a low-temperature buffer layer grown by molecular-beam epitaxy. At radio frequencies the low-temperature buffer layer reduced the signal coupling b...

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Veröffentlicht in:IEEE transactions on electron devices 1989-09, Vol.36 (9), p.1546-1556
Hauptverfasser: Chen, C.-L., Smith, F.W., Calawa, A.R., Mahoney, L.J., Manfra, M.J.
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Sprache:eng
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Zusammenfassung:Sidegating effects relevant to GaAs digital, analog, and monolithic microwave integrated circuits have been significantly reduced or eliminated by using a low-temperature buffer layer grown by molecular-beam epitaxy. At radio frequencies the low-temperature buffer layer reduced the signal coupling between devices, which is an important consideration in microwave integrated circuits. For digital circuit applications, the low-temperature buffer layer eliminated the dependence of the voltage level of an inverter on the logic state of adjacent devices and on the duty cycle of a pulse train encountered in the circuit. The highly resistive nature of the low-temperature buffer allows experimental identification of the role that a buffer layer plays in sidegating.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.34211