Use of methane in an electron cyclotron resonance plasma source for carbon delta-doping in GaAs molecular beam epitaxy

An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta-doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm−2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.