Positive-tone silylation processes at 193 nm
A silylation process based on laser induced crosslinking has been developed using novolac, novolac/ diazoquinone blends and chemically amplified resists. Dimethylsilyldimethylamine was used as a silylating reagent. The diffusion characteristics show a change at the polymer glass transition temperatu...
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Veröffentlicht in: | Microelectronic engineering 1991-01, Vol.13 (1-4), p.51-56 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A silylation process based on laser induced crosslinking has been developed using novolac, novolac/ diazoquinone blends and chemically amplified resists. Dimethylsilyldimethylamine was used as a silylating reagent. The diffusion characteristics show a change at the polymer glass transition temperature. The profile of diffused silicon is anisotropic, and diffusion in unexposed regions of the film is affected by the extent of exposure in adjacent regions of the film. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/0167-9317(91)90046-G |