Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE

Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE

The material characteristics of MBE grown AlInAs layers relevant to AlInAs/InGaAs HEMTs, such as surface morphology and specific resistivity, and doping and Schottky contact behaviour, have been investigated in dependence of the growth temperature. Respective optimum results were obtained at differe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ESSDERC '91: 21st European Solid State Device Research Conference 1991, Vol.15 (1), p.569-572
Hauptverfasser: Künzel, H., Passenberg, W., Böttcher, J., Heedt, C.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Electrons
Gold
HEMTs
MODFETs
Rough surfaces
Schottky barriers
Surface morphology
Surface roughness
Temperature dependence
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The material characteristics of MBE grown AlInAs layers relevant to AlInAs/InGaAs HEMTs, such as surface morphology and specific resistivity, and doping and Schottky contact behaviour, have been investigated in dependence of the growth temperature. Respective optimum results were obtained at different temperatures which were adopted for the growth of HEMT structures. Preliminary results on 1 μm gate length devices are presented.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(91)90286-M