Epitaxial growth of α-Fe films on Si(111) substrates

Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30 °C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ−2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films...

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Veröffentlicht in:	Applied physics letters 1991-08, Vol.59 (8), p.953-955
Hauptverfasser:	YANG-TSE CHANG, YEN-LUNG CHEN, KARMARKAR, M. M, WEN-JIN MENG
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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