Epitaxial growth of α-Fe films on Si(111) substrates

Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30 °C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ−2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1991-08, Vol.59 (8), p.953-955
Hauptverfasser: YANG-TSE CHANG, YEN-LUNG CHEN, KARMARKAR, M. M, WEN-JIN MENG
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30 °C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ−2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11̄0] direction is parallel to the Si[11̄0] direction in the plane of the substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106312