IPEL-a novel ion-implanted electrically programmable element

IPEL-a novel ion-implanted electrically programmable element

The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions with the substrate increases resistivity of a normal...

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Veröffentlicht in:IEEE electron device letters 1989-05, Vol.10 (5), p.180-182
Hauptverfasser: Shacham-Diamand, Y., Sinar, A., Sirkin, E., Blech, I., Gerzberg, L.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous materials
Applied sciences
Conductivity
Contact resistance
Crystallization
Electronics
Exact sciences and technology
Implants
Integrated circuits
Integrated circuits by function (including memories and processors)
Ion implantation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Temperature dependence
Voltage
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Zusammenfassung:The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions with the substrate increases resistivity of a normal contact to single-crystal silicon by many orders of magnitude. The specific resistance of a typical aluminum contact to heavily doped n-type silicon increases from 10/sup -6/-10/sup -5/ to 1-10 Omega -cm/sup 2/ at room temperature. Applying a sufficiently high voltage induces an irreversible transformation of the device into a low-resistance state. The postprogramming resistance can be as low as 100 Omega for a 3*3- mu m/sup 2/ contact at room temperature.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.31713