Inverted cavity GaAs/InGaAs asymmetric Fabry-Perot reflection modulator

Inverted cavity GaAs/InGaAs asymmetric Fabry-Perot reflection modulator

We report the realization of an inverted cavity (through-substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained-layer GaAs/InGaAs multiple quantum wells. At room tempe...

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Veröffentlicht in:Applied physics letters 1991-09, Vol.59 (14), p.1664-1666
Hauptverfasser: KEZHONG HU, LI CHEN, ANUPAM MADHUKAR, PING CHEN, KYRIAKAKIS, C, KARIM, Z, TANGUAY, A. R
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Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optics
Physics
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container_end_page 1666
container_issue 14
container_start_page 1664
container_title Applied physics letters
container_volume 59
creator KEZHONG HU
LI CHEN
ANUPAM MADHUKAR
PING CHEN
KYRIAKAKIS, C
KARIM, Z
TANGUAY, A. R
description We report the realization of an inverted cavity (through-substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained-layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 Å.
doi_str_mv 10.1063/1.106261
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source AIP Digital Archive
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optics
Physics
title Inverted cavity GaAs/InGaAs asymmetric Fabry-Perot reflection modulator
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