Inverted cavity GaAs/InGaAs asymmetric Fabry-Perot reflection modulator

We report the realization of an inverted cavity (through-substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained-layer GaAs/InGaAs multiple quantum wells. At room tempe...

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Veröffentlicht in:	Applied physics letters 1991-09, Vol.59 (14), p.1664-1666
Hauptverfasser:	KEZHONG HU, LI CHEN, ANUPAM MADHUKAR, PING CHEN, KYRIAKAKIS, C, KARIM, Z, TANGUAY, A. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical elements, devices, and systems Optics Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report the realization of an inverted cavity (through-substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained-layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 Å.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106261