A novel 0.5- mu m n super(+)-p super(+) poly-gated salicide CMOS process using germanium implantation

A novel salicided twin-tub 0.5- mu m CMOS process using germanium implantation is presented. n super(+) and p super(+) dopants are implanted after salicide formation to fabricate devices with low junction leakage and low silicide-to-diffusion contact resistance. Germanium implantation prior to silicide formation is used to control short-channel transistor characteristics. A significant reduction in the lateral n super(-) and p super(-) diffusion is observed for germanium-implanted LDD MOSFET's, resulting in minimized overlap capacitance as well as improved short-channel behavior.