Natural buffer layer in DyBa2Cu3O(7-x) films grown on Si by molecular beam epitaxy

Natural buffer layer in DyBa2Cu3O(7-x) films grown on Si by molecular beam epitaxy

Growth of a natural buffer layer has been observed for DyBa2Cu3O(7-x) films grown on Si substrates. The best DyBa2Cu3O(7-x) film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-A thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zer...

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Veröffentlicht in:Journal of applied physics 1991-11, Vol.70, p.5697-5699
Hauptverfasser: Nordman, C A, Wang, T, Chandrasekhar, N, Beauchamp, K M, ACHUTHARAMAN, V S, Schulze, R K, Spalding, G C, Lin, Z-H, Evans, J F, Goldman, A M
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Sprache:eng
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Zusammenfassung:Growth of a natural buffer layer has been observed for DyBa2Cu3O(7-x) films grown on Si substrates. The best DyBa2Cu3O(7-x) film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-A thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of DyBa2Cu3O(7-x) film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-A amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 A of chemical interdiffusion. (Author)
ISSN:0021-8979