Narrow-gap semiconducting silicides: the band structure

Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi 1.75 was found to have an indirect gap value of 0.16 eV. The first direct transition with app...

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Veröffentlicht in:	Microelectronic engineering 2000, Vol.50 (1), p.249-255
Hauptverfasser:	Filonov, A.B, Migas, D.B, Shaposhnikov, V.L, Borisenko, V.E, Heinrich, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band structure Electronics Energy gap Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicide
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Zusammenfassung:	Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi 1.75 was found to have an indirect gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted. Ru 2Si 3 is revealed to be a direct gap semiconductor with an energy gap of 0.41 eV, while the isostructural Ru 2Ge 3 has a competitive indirect–direct character of the band gap of about 0.31 eV.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/S0167-9317(99)00289-0