Uniform junction temperature AlGaAs/GaAS power heterojunction bipolar transistors on silicon substrates

Uniform junction temperature AlGaAs/GaAS power heterojunction bipolar transistors on silicon substrates

AlGaAs/GaAs power heterojunction bipolar transistors on Si substrates exhibiting uniform junction temperature distribution are reported. Owing to a unique device design, the temperature spread across the entire device area is about 1 °C. The device exhibits a common emitter current gain of 20, a max...

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Veröffentlicht in:Applied physics letters 1991-03, Vol.58 (10), p.1068-1070
Hauptverfasser: GUANG-BO GAO, ZHI-FANG FAN, BLACKBURN, D. L, ÜNLÜ, M. S, CHEN, J, ADOMI, K, MORKOC, H
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
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Zusammenfassung:AlGaAs/GaAs power heterojunction bipolar transistors on Si substrates exhibiting uniform junction temperature distribution are reported. Owing to a unique device design, the temperature spread across the entire device area is about 1 °C. The device exhibits a common emitter current gain of 20, a maximum collector current of 0.6 A, and a collector base junction breakdown voltage of 25 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104373