Preparation of perovskite, Pb(Zr, Ti)O sub(3) thin-films on YSZ(111)/Si(111) substrates by post-deposition annealing

Perovskite Pb(Zr, Ti)O sub(3) [PZT] thin-films on yttria-stabilized zirconia [YSZ] (111)/Si(111) substrates were prepared at various growth temperatures by quasi-metallic mode reactive sputtering (QMMRS) system using a (ZrTi+x%PbO) composite target. The surface of the PZT film deposited on a YSZ(111)/Si(111) substrate, however, revealed many holes (no growth region of PZT film). These holes could be eliminated by using a post-deposition annealing process. Perovskite Pb(Zr, Ti)O sub(3) thin films were obtained by an annealing process at temperatures of approximately 600 degree C in an oxygen gas atmosphere for 1 h. Moreover, ferroelectric properties were observed on Pb(Zr, Ti)O sub(3) thin films/YSZ(111)/Si(111) structure.