MODFET noise model and properties with hot-electron effects

A noise model to study hot-electron effects on noise properties is derived. This model gives H. Fukui's (1979) coefficient an analytical expression in terms of bias condition and high-field parameters. 0.3- mu m gate length pseudomorphic MODFETs with and without a high-energy barrier buffer are...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-09, Vol.36 (9), p.1847-1850
Hauptverfasser:	Wang, G.W., Chen, Y.K., Kuang, J.B., Eastman, L.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Data analysis Electronics Electrons Exact sciences and technology Fluctuations Gain HEMTs Microelectronics MODFETs Noise figure Performance analysis Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Transistors
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