MODFET noise model and properties with hot-electron effects

MODFET noise model and properties with hot-electron effects

A noise model to study hot-electron effects on noise properties is derived. This model gives H. Fukui's (1979) coefficient an analytical expression in terms of bias condition and high-field parameters. 0.3- mu m gate length pseudomorphic MODFETs with and without a high-energy barrier buffer are...

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Veröffentlicht in:IEEE transactions on electron devices 1989-09, Vol.36 (9), p.1847-1850
Hauptverfasser: Wang, G.W., Chen, Y.K., Kuang, J.B., Eastman, L.F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Data analysis
Electronics
Electrons
Exact sciences and technology
Fluctuations
Gain
HEMTs
Microelectronics
MODFETs
Noise figure
Performance analysis
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
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Zusammenfassung:A noise model to study hot-electron effects on noise properties is derived. This model gives H. Fukui's (1979) coefficient an analytical expression in terms of bias condition and high-field parameters. 0.3- mu m gate length pseudomorphic MODFETs with and without a high-energy barrier buffer are fabricated and characterized. The noise data analyzed by the noise model agree with microwave characteristics where carrier deconfinement of two-dimensional electrons degrades both the noise and high-frequency performance.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.34253