Impurity-Enhanced Intergranular Cavity Formation in Silicon Nitride at High Temperatures
The effect of trace impurities on high‐temperature strength is examined in Si3N4 sintered without additives. Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐...
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| Veröffentlicht in: | Journal of the American Ceramic Society 1991-04, Vol.74 (4), p.752-759 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Tanaka, Isao Pezzotti, Giuseppe Matsushita, Ken-ichi Miyamoto, Yoshinari Okamoto, Taira |
| description | The effect of trace impurities on high‐temperature strength is examined in Si3N4 sintered without additives. Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐purity material at 1400°C. A relaxation peak of internal friction is observed only in the low‐purity material, at ≅1200°C, and the origin of this peak is ascribed to the initial stage of SCG—that is, the cavity‐nucleation stage, enhanced by impurities. Based on the present results, a model for impurity‐enhanced SCG is proposed. |
| doi_str_mv | 10.1111/j.1151-2916.1991.tb06920.x |
| format | Article |
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Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐purity material at 1400°C. A relaxation peak of internal friction is observed only in the low‐purity material, at ≅1200°C, and the origin of this peak is ascribed to the initial stage of SCG—that is, the cavity‐nucleation stage, enhanced by impurities. Based on the present results, a model for impurity‐enhanced SCG is proposed.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1151-2916.1991.tb06920.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Applied sciences ; Building materials. Ceramics. 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Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐purity material at 1400°C. A relaxation peak of internal friction is observed only in the low‐purity material, at ≅1200°C, and the origin of this peak is ascribed to the initial stage of SCG—that is, the cavity‐nucleation stage, enhanced by impurities. Based on the present results, a model for impurity‐enhanced SCG is proposed.</description><subject>Applied sciences</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Ceramic industries</subject><subject>Chemical industry and chemicals</subject><subject>crack growth</subject><subject>Exact sciences and technology</subject><subject>friction</subject><subject>impurities</subject><subject>mechanical properties</subject><subject>silicon nitride</subject><subject>Structural ceramics</subject><subject>Technical ceramics</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqVkE1vEzEQhi0EEqHwH1ZIcNvgj921zQVVIW2DqiJBoYiLNfZOWof9CLYXkn-Po0RwxpfxaN55RnoIecnonOX3ZpNLzUquWTNnWrN5srTRnM53j8iM1afRYzKjlPJSKk6fkmcxbnLLtKpm5Nuq307Bp325HB5gcNgWqyFhuA8wTB2EYgG_8rS4GEMPyY9D4Yfis--8y98bn4JvsYBUXPn7h-IW-y0GSFPA-Jw8WUMX8cWpnpEvF8vbxVV5_fFytTi_Ll2lKl5q3WKNFKyS68oJJgWi4krZVlvLhW1b2wrbcOdAiApqARQawWtQKKTlUpyR10fuNow_J4zJ9D467DoYcJyi4TVXQokqB98egy6MMQZcm23wPYS9YdQcZJqNOcg0B2PmINOcZJpdXn51ugLRQbfOdpyP_whaMs64zrl3x9xv3-H-Py6YD-eLpax5JpRHgo8Jd38JEH6YRgpZm7ubS_Ppq757r783Ros_UzqZ8A</recordid><startdate>199104</startdate><enddate>199104</enddate><creator>Tanaka, Isao</creator><creator>Pezzotti, Giuseppe</creator><creator>Matsushita, Ken-ichi</creator><creator>Miyamoto, Yoshinari</creator><creator>Okamoto, Taira</creator><general>Blackwell Publishing Ltd</general><general>Blackwell</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>199104</creationdate><title>Impurity-Enhanced Intergranular Cavity Formation in Silicon Nitride at High Temperatures</title><author>Tanaka, Isao ; Pezzotti, Giuseppe ; Matsushita, Ken-ichi ; Miyamoto, Yoshinari ; Okamoto, Taira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4842-99de5e0ab87f4c3173ee8288bd9bb23bddbd3b62cca334a53a0a6325a8e37b273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Building materials. Ceramics. Glasses</topic><topic>Ceramic industries</topic><topic>Chemical industry and chemicals</topic><topic>crack growth</topic><topic>Exact sciences and technology</topic><topic>friction</topic><topic>impurities</topic><topic>mechanical properties</topic><topic>silicon nitride</topic><topic>Structural ceramics</topic><topic>Technical ceramics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, Isao</creatorcontrib><creatorcontrib>Pezzotti, Giuseppe</creatorcontrib><creatorcontrib>Matsushita, Ken-ichi</creatorcontrib><creatorcontrib>Miyamoto, Yoshinari</creatorcontrib><creatorcontrib>Okamoto, Taira</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanaka, Isao</au><au>Pezzotti, Giuseppe</au><au>Matsushita, Ken-ichi</au><au>Miyamoto, Yoshinari</au><au>Okamoto, Taira</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impurity-Enhanced Intergranular Cavity Formation in Silicon Nitride at High Temperatures</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>1991-04</date><risdate>1991</risdate><volume>74</volume><issue>4</issue><spage>752</spage><epage>759</epage><pages>752-759</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>The effect of trace impurities on high‐temperature strength is examined in Si3N4 sintered without additives. Strength degradation above 1000°C occurs only in the low‐purity material, which also exhibits an intergranular slow crack growth (SCG) rate 2 orders of magnitude faster than that of the high‐purity material at 1400°C. A relaxation peak of internal friction is observed only in the low‐purity material, at ≅1200°C, and the origin of this peak is ascribed to the initial stage of SCG—that is, the cavity‐nucleation stage, enhanced by impurities. Based on the present results, a model for impurity‐enhanced SCG is proposed.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1151-2916.1991.tb06920.x</doi><tpages>8</tpages></addata></record> |
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| ispartof | Journal of the American Ceramic Society, 1991-04, Vol.74 (4), p.752-759 |
| issn | 0002-7820 1551-2916 |
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| source | Wiley Journals |
| subjects | Applied sciences Building materials. Ceramics. Glasses Ceramic industries Chemical industry and chemicals crack growth Exact sciences and technology friction impurities mechanical properties silicon nitride Structural ceramics Technical ceramics |
| title | Impurity-Enhanced Intergranular Cavity Formation in Silicon Nitride at High Temperatures |
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