Microstructure and orientation effects in diamond thin films

The microstructure and orientation of diamond thin films grown by plasma assisted chemical vapor deposition have been studied as functions of growth temperature, substrate identity, and substrate pre-treatment. Results indicate that for growth temperatures below 650 °C, competition between film grow...

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Veröffentlicht in:Journal of applied physics 1991-05, Vol.69 (9), p.6456-6460
Hauptverfasser: DENATALE, J. F, HARKER, A. B, FLINTOFF, J. F
Format: Artikel
Sprache:eng
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Zusammenfassung:The microstructure and orientation of diamond thin films grown by plasma assisted chemical vapor deposition have been studied as functions of growth temperature, substrate identity, and substrate pre-treatment. Results indicate that for growth temperatures below 650 °C, competition between film growth and etching can lead to preferential (110) oriented films on a variety of substrate materials. This orientation can be globally sustained during growth by the occurrence of (111) planar defects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.348851