Ellipsometric investigation of the growth mode of antimony overlayers on GaAs(110)

Antimony overlayers deposited on GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum have been investigated by ellipsometric spectroscopy. Antimony films in the submonolayer coverage range exhibit spectral features arising from interband transitions. Films of up to 10ML (where ML denotes mon...

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Veröffentlicht in:	Thin solid films 1989-10, Vol.177 (1), p.287-293
Hauptverfasser:	Strumpler, R, Luth, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysing. Testing. Standards Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Nondestructive testing Physics Specific materials Vacuum deposition
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Zusammenfassung:	Antimony overlayers deposited on GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum have been investigated by ellipsometric spectroscopy. Antimony films in the submonolayer coverage range exhibit spectral features arising from interband transitions. Films of up to 10ML (where ML denotes monolayer) thickness are of inhomogeneous consistency as demonstrated by comparison with calculations based on the Maxwell Garnett model. Slight annealing causes a smoothing of the films. Thicker films exhibit an optical behaviour like that of polycrystalline antimony.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(89)90576-2