Low temperature resistance of p-InSb(Mn)

Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Cryogenics (Guildford) 1991-10, Vol.31 (10), p.874-877
Hauptverfasser: Obukhov, S.A., Neganov, B.S., Kiselev, Yu.F., Chemikov, A.N., Vekshina, V.S., Pepik, N.I., Popkov, A.N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 877
container_issue 10
container_start_page 874
container_title Cryogenics (Guildford)
container_volume 31
creator Obukhov, S.A.
Neganov, B.S.
Kiselev, Yu.F.
Chemikov, A.N.
Vekshina, V.S.
Pepik, N.I.
Popkov, A.N.
description Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn 2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn).
doi_str_mv 10.1016/0011-2275(91)90020-W
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25264536</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>001122759190020W</els_id><sourcerecordid>25263771</sourcerecordid><originalsourceid>FETCH-LOGICAL-c426t-1d9f2032cc3f4ff9fcab99f6008778d71762f7a3da40f7ca242257619b52cc63</originalsourceid><addsrcrecordid>eNqNkU1LAzEQhoMoWKv_wMMeRNrD6iTZJJuLIMWPQsWDhR5Dmk0gst1dk63Sf29qS4_S08DwvO_AMwhdY7jDgPk9AMY5IYKNJB5LAAL54gQNcClkWlN2igYH5BxdxPgJAAXhZIBGs_Yn6-2qs0H362CzYKOPvW6MzVqXdfm0-ViO3prxJTpzuo72aj-HaP78NJ-85rP3l-nkcZabVNjnuJKOACXGUFc4J53RSykdByiFKCuBBSdOaFrpApwwmhSEMMGxXLKU4XSIbne1XWi_1jb2auWjsXWtG9uuoyKM8ILRY0EMR4FUCJzAYgea0MYYrFNd8CsdNgqD2npWW4lqK1FJrP48q0WK3ez7dTS6diG58_GQZVBSkp4wRA87zCZ5394GFY23SXPlgzW9qlr__51fJMGOIQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25263771</pqid></control><display><type>article</type><title>Low temperature resistance of p-InSb(Mn)</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Obukhov, S.A. ; Neganov, B.S. ; Kiselev, Yu.F. ; Chemikov, A.N. ; Vekshina, V.S. ; Pepik, N.I. ; Popkov, A.N.</creator><creatorcontrib>Obukhov, S.A. ; Neganov, B.S. ; Kiselev, Yu.F. ; Chemikov, A.N. ; Vekshina, V.S. ; Pepik, N.I. ; Popkov, A.N.</creatorcontrib><description>Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn 2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn).</description><identifier>ISSN: 0011-2275</identifier><identifier>EISSN: 1879-2235</identifier><identifier>DOI: 10.1016/0011-2275(91)90020-W</identifier><identifier>CODEN: CRYOAX</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; magnetoresistance ; Physics ; Thermal instruments, apparatus and techniques ; thermometry ; thermoresistors</subject><ispartof>Cryogenics (Guildford), 1991-10, Vol.31 (10), p.874-877</ispartof><rights>1991</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-1d9f2032cc3f4ff9fcab99f6008778d71762f7a3da40f7ca242257619b52cc63</citedby><cites>FETCH-LOGICAL-c426t-1d9f2032cc3f4ff9fcab99f6008778d71762f7a3da40f7ca242257619b52cc63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0011-2275(91)90020-W$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5083222$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Obukhov, S.A.</creatorcontrib><creatorcontrib>Neganov, B.S.</creatorcontrib><creatorcontrib>Kiselev, Yu.F.</creatorcontrib><creatorcontrib>Chemikov, A.N.</creatorcontrib><creatorcontrib>Vekshina, V.S.</creatorcontrib><creatorcontrib>Pepik, N.I.</creatorcontrib><creatorcontrib>Popkov, A.N.</creatorcontrib><title>Low temperature resistance of p-InSb(Mn)</title><title>Cryogenics (Guildford)</title><description>Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn 2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn).</description><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>magnetoresistance</subject><subject>Physics</subject><subject>Thermal instruments, apparatus and techniques</subject><subject>thermometry</subject><subject>thermoresistors</subject><issn>0011-2275</issn><issn>1879-2235</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqNkU1LAzEQhoMoWKv_wMMeRNrD6iTZJJuLIMWPQsWDhR5Dmk0gst1dk63Sf29qS4_S08DwvO_AMwhdY7jDgPk9AMY5IYKNJB5LAAL54gQNcClkWlN2igYH5BxdxPgJAAXhZIBGs_Yn6-2qs0H362CzYKOPvW6MzVqXdfm0-ViO3prxJTpzuo72aj-HaP78NJ-85rP3l-nkcZabVNjnuJKOACXGUFc4J53RSykdByiFKCuBBSdOaFrpApwwmhSEMMGxXLKU4XSIbne1XWi_1jb2auWjsXWtG9uuoyKM8ILRY0EMR4FUCJzAYgea0MYYrFNd8CsdNgqD2npWW4lqK1FJrP48q0WK3ez7dTS6diG58_GQZVBSkp4wRA87zCZ5394GFY23SXPlgzW9qlr__51fJMGOIQ</recordid><startdate>19911001</startdate><enddate>19911001</enddate><creator>Obukhov, S.A.</creator><creator>Neganov, B.S.</creator><creator>Kiselev, Yu.F.</creator><creator>Chemikov, A.N.</creator><creator>Vekshina, V.S.</creator><creator>Pepik, N.I.</creator><creator>Popkov, A.N.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>8BQ</scope><scope>JG9</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19911001</creationdate><title>Low temperature resistance of p-InSb(Mn)</title><author>Obukhov, S.A. ; Neganov, B.S. ; Kiselev, Yu.F. ; Chemikov, A.N. ; Vekshina, V.S. ; Pepik, N.I. ; Popkov, A.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-1d9f2032cc3f4ff9fcab99f6008778d71762f7a3da40f7ca242257619b52cc63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Exact sciences and technology</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>magnetoresistance</topic><topic>Physics</topic><topic>Thermal instruments, apparatus and techniques</topic><topic>thermometry</topic><topic>thermoresistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Obukhov, S.A.</creatorcontrib><creatorcontrib>Neganov, B.S.</creatorcontrib><creatorcontrib>Kiselev, Yu.F.</creatorcontrib><creatorcontrib>Chemikov, A.N.</creatorcontrib><creatorcontrib>Vekshina, V.S.</creatorcontrib><creatorcontrib>Pepik, N.I.</creatorcontrib><creatorcontrib>Popkov, A.N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>Cryogenics (Guildford)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Obukhov, S.A.</au><au>Neganov, B.S.</au><au>Kiselev, Yu.F.</au><au>Chemikov, A.N.</au><au>Vekshina, V.S.</au><au>Pepik, N.I.</au><au>Popkov, A.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature resistance of p-InSb(Mn)</atitle><jtitle>Cryogenics (Guildford)</jtitle><date>1991-10-01</date><risdate>1991</risdate><volume>31</volume><issue>10</issue><spage>874</spage><epage>877</epage><pages>874-877</pages><issn>0011-2275</issn><eissn>1879-2235</eissn><coden>CRYOAX</coden><abstract>Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn 2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn).</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/0011-2275(91)90020-W</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0011-2275
ispartof Cryogenics (Guildford), 1991-10, Vol.31 (10), p.874-877
issn 0011-2275
1879-2235
language eng
recordid cdi_proquest_miscellaneous_25264536
source Elsevier ScienceDirect Journals Complete
subjects Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
magnetoresistance
Physics
Thermal instruments, apparatus and techniques
thermometry
thermoresistors
title Low temperature resistance of p-InSb(Mn)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T09%3A20%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20resistance%20of%20p-InSb(Mn)&rft.jtitle=Cryogenics%20(Guildford)&rft.au=Obukhov,%20S.A.&rft.date=1991-10-01&rft.volume=31&rft.issue=10&rft.spage=874&rft.epage=877&rft.pages=874-877&rft.issn=0011-2275&rft.eissn=1879-2235&rft.coden=CRYOAX&rft_id=info:doi/10.1016/0011-2275(91)90020-W&rft_dat=%3Cproquest_cross%3E25263771%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25263771&rft_id=info:pmid/&rft_els_id=001122759190020W&rfr_iscdi=true