Low temperature resistance of p-InSb(Mn)
Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetor...
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Veröffentlicht in: | Cryogenics (Guildford) 1991-10, Vol.31 (10), p.874-877 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn
2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn). |
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ISSN: | 0011-2275 1879-2235 |
DOI: | 10.1016/0011-2275(91)90020-W |