Low temperature resistance of p-InSb(Mn)

Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetor...

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Veröffentlicht in:Cryogenics (Guildford) 1991-10, Vol.31 (10), p.874-877
Hauptverfasser: Obukhov, S.A., Neganov, B.S., Kiselev, Yu.F., Chemikov, A.N., Vekshina, V.S., Pepik, N.I., Popkov, A.N.
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Sprache:eng
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Zusammenfassung:Thermoresistors made of InSb(Mn) for use at ultra-low temperatures are described. Below 10 mK they have higher thermosensitivity than other known thermoresistors, with a relatively low specific resistance. They have a logarithmic dependence of specific resistance on temperature and negative magnetoresistance. The magnetic Mn 2+ impurity in the non-magnetic semiconductor InSb is supposed to cause a magnetic gap in the impurity band owing to exchange interaction between manganese ions and holes. This effect increases for compensated p-InSb(Mn).
ISSN:0011-2275
1879-2235
DOI:10.1016/0011-2275(91)90020-W