Large-area mosaic diamond films approaching single-crystal quality

The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposit...

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Veröffentlicht in:Applied physics letters 1991-06, Vol.58 (22), p.2485-2487
Hauptverfasser: GEIS, M. W, SMITH, H. I, ARGOITIA, A, ANGUS, J, MA, G.-H. M, GLASS, J. T, BUTLER, J, ROBINSON, C. J, PRYOR, R
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container_end_page 2487
container_issue 22
container_start_page 2485
container_title Applied physics letters
container_volume 58
creator GEIS, M. W
SMITH, H. I
ARGOITIA, A
ANGUS, J
MA, G.-H. M
GLASS, J. T
BUTLER, J
ROBINSON, C. J
PRYOR, R
description The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposition overgrowth of the diamond seeds to form a continuous film. The film comprises ∼100 μm single crystals, which are separated by low-angle grain boundaries of a few degrees or less. We believe that these low-angle grain boundaries will not affect the electrical properties of majority-carrier devices.
doi_str_mv 10.1063/1.104851
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subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
title Large-area mosaic diamond films approaching single-crystal quality
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