Electronic energy levels of defects that anneal in the 280-K stage in irradiated n-type gallium arsenide

Three hole traps, with electronic levels at 0.16 eV (low concentration), at approximately 0.25 and 0.42 eV above the valence band, are removed in a thermal annealing stage centered at approximately 280 K, consistent with the well-known resistivity-annealing stage found at this temp. in electron-irradiated n-GaAs.