High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz
The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathod...
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| Veröffentlicht in: | IEEE electron device letters 1989-07, Vol.10 (7), p.288-290 |
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| container_end_page | 290 |
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| container_issue | 7 |
| container_start_page | 288 |
| container_title | IEEE electron device letters |
| container_volume | 10 |
| creator | Couch, N.R. Spooner, H. Beton, P.H. Kelly, M.J. Lee, M.E. Rees, P.K. Kerr, T.M. |
| description | The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.< > |
| doi_str_mv | 10.1109/55.29655 |
| format | Article |
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The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.29655</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cathodes ; Diodes ; Doping profiles ; Electronics ; Exact sciences and technology ; Frequency ; Gallium arsenide ; Gunn devices ; Microwave generation ; Power generation ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.< ></description><subject>Applied sciences</subject><subject>Cathodes</subject><subject>Diodes</subject><subject>Doping profiles</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Gallium arsenide</subject><subject>Gunn devices</subject><subject>Microwave generation</subject><subject>Power generation</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature distribution</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqN0D1PwzAQBmALgUQpSKxsHhBiaIrPX4nHqkCKVIkF5siJLyVVmhQ7HeDXkzYVK0zWyY9e3b2EXAObAjDzoNSUG63UCRmBUknElBanZMRiCZEAps_JRQhrxkDKWI7I46JafURb9GXrN7YpcEJX3jp0dFandhZo1ayx6Fo_oYcx3TUNdVXrMFDbUSNpuvi-JGelrQNeHd8xeX9-epsvouVr-jKfLaNCCugip50WXAPI0hkHiQahcyE0zx2CsjmTuZVWWSGNRsaZKHgsnE2sQVHonIkxuRtyt7793GHosk0VCqxr22C7CxlPYsM1g3_Afg8Vm7-h4lImOunh_QAL34bgscy2vtpY_5UBy_bFZ0plh-J7envMtKGwden7Wqvw62PBwZj9MTcDqxDx93eI-AFHRoZP</recordid><startdate>19890701</startdate><enddate>19890701</enddate><creator>Couch, N.R.</creator><creator>Spooner, H.</creator><creator>Beton, P.H.</creator><creator>Kelly, M.J.</creator><creator>Lee, M.E.</creator><creator>Rees, P.K.</creator><creator>Kerr, T.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19890701</creationdate><title>High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz</title><author>Couch, N.R. ; Spooner, H. ; Beton, P.H. ; Kelly, M.J. ; Lee, M.E. ; Rees, P.K. ; Kerr, T.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c431t-d6d6326114fd9d186136b3362bde15ab04ba4a5a3496e0203c273da8a9e3c6b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Applied sciences</topic><topic>Cathodes</topic><topic>Diodes</topic><topic>Doping profiles</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Gallium arsenide</topic><topic>Gunn devices</topic><topic>Microwave generation</topic><topic>Power generation</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature distribution</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Couch, N.R.</creatorcontrib><creatorcontrib>Spooner, H.</creatorcontrib><creatorcontrib>Beton, P.H.</creatorcontrib><creatorcontrib>Kelly, M.J.</creatorcontrib><creatorcontrib>Lee, M.E.</creatorcontrib><creatorcontrib>Rees, P.K.</creatorcontrib><creatorcontrib>Kerr, T.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Couch, N.R.</au><au>Spooner, H.</au><au>Beton, P.H.</au><au>Kelly, M.J.</au><au>Lee, M.E.</au><au>Rees, P.K.</au><au>Kerr, T.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1989-07-01</date><risdate>1989</risdate><volume>10</volume><issue>7</issue><spage>288</spage><epage>290</epage><pages>288-290</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.29655</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1989-07, Vol.10 (7), p.288-290 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25244868 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Cathodes Diodes Doping profiles Electronics Exact sciences and technology Frequency Gallium arsenide Gunn devices Microwave generation Power generation Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature distribution Voltage |
| title | High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz |
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