High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz

High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz

The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathod...

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Veröffentlicht in:IEEE electron device letters 1989-07, Vol.10 (7), p.288-290
Hauptverfasser: Couch, N.R., Spooner, H., Beton, P.H., Kelly, M.J., Lee, M.E., Rees, P.K., Kerr, T.M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cathodes
Diodes
Doping profiles
Electronics
Exact sciences and technology
Frequency
Gallium arsenide
Gunn devices
Microwave generation
Power generation
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature distribution
Voltage
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Zusammenfassung:The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.29655