Kinetical Aspects of the LPCVD of Titanium Nitride from Titanium Tetrachloride and Ammonia

TiN was deposited from the reactant gases TiCl4, NH3, and H2, with Ar as a carrier gas, in a cold wall CVD reactor at a total deposition pressure of 20.0 Pa. The deposition rate and film properties were studied as a function of the deposition temperature and the partial pressure of the reactant gases. A rate equation for TiN was determined. No detailed reaction mechanism of the TiN deposition could be developed. Activation energy was 61 kJ /mol. At increasing deposition temperature and at higher values of the PNH3/PTiCl4 ratio, lower values of electrical resistivity were observed. This resistivity variation is caused by the impurity content (Cl and O) in the TiN films, which varies with the process parameters. 16 refs.