High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers
10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern q...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1989-05, Vol.65 (9), p.3716-3718 |
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| container_end_page | 3718 |
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| container_issue | 9 |
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| container_title | J. Appl. Phys.; (United States) |
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| creator | BOTEZ, D MAWST, L. J HAYASHIDA, P ROTH, T. J |
| description | 10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed. |
| doi_str_mv | 10.1063/1.342601 |
| format | Article |
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J</creatorcontrib><creatorcontrib>HAYASHIDA, P</creatorcontrib><creatorcontrib>ROTH, T. J</creatorcontrib><creatorcontrib>TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</creatorcontrib><title>High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers</title><title>J. Appl. Phys.; (United States)</title><description>10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.</description><subject>420300 - Engineering- Lasers- (-1989)</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>DESIGN</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INTERFEROMETRY</subject><subject>LASERS</subject><subject>MODE LOCKING</subject><subject>OPTICAL PROPERTIES</subject><subject>Optics</subject><subject>PHYSICAL PROPERTIES</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kMFq3DAQhkVoIdu00EcQpZQeqkRjyVr7uIQ2CQRyac9iVhpl1dqWq3Eoeft42dDLzDB8_PB_QnwEfQnamSu4NLZxGs7EBnTXq23b6jdio3UDquu3_bl4x_xba4DO9BvBt_nxoObyj-o3GXNKFcOSy6SGPOaFotoTjrLMVPH4lqmWUeZpoZpoPWmpOcj5gExqKOEPRYm14jPLkuRuuMEdXx3HGl0iyWHlKr8XbxMOTB9e94X49eP7z-tbdf9wc3e9u1fBgF1UbAJFbe1euy4lR1Z3EJu1AgFF0qgRTWghGrRk4jam6CAE6mzcx6QTmgvx6ZRbeMmew9onHEKZJgqLd8ZAa9wKfTlBcy1_n4gXP2YONAw4UXli37SNsaY_gl9PYKiFuVLyc80j1mcP2h_Ve_An9Sv6-TUTOeCwOp1C5v-86x10VpsX1r2EeQ</recordid><startdate>19890501</startdate><enddate>19890501</enddate><creator>BOTEZ, D</creator><creator>MAWST, L. 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J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-d2ced044b068ff6e4081d2979e1ede0a0aa3c51d3a4e3d7dfd61cce84dbdf0fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>420300 - Engineering- Lasers- (-1989)</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>DESIGN</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INTERFEROMETRY</topic><topic>LASERS</topic><topic>MODE LOCKING</topic><topic>OPTICAL PROPERTIES</topic><topic>Optics</topic><topic>PHYSICAL PROPERTIES</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOTEZ, D</creatorcontrib><creatorcontrib>MAWST, L. J</creatorcontrib><creatorcontrib>HAYASHIDA, P</creatorcontrib><creatorcontrib>ROTH, T. J</creatorcontrib><creatorcontrib>TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOTEZ, D</au><au>MAWST, L. J</au><au>HAYASHIDA, P</au><au>ROTH, T. J</au><aucorp>TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1989-05-01</date><risdate>1989</risdate><volume>65</volume><issue>9</issue><spage>3716</spage><epage>3718</epage><pages>3716-3718</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.342601</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1989-05, Vol.65 (9), p.3716-3718 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | 420300 - Engineering- Lasers- (-1989) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES DESIGN ENGINEERING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INTERFEROMETRY LASERS MODE LOCKING OPTICAL PROPERTIES Optics PHYSICAL PROPERTIES Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes |
| title | High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers |
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