High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers

High-power, diffraction-limited-beam operation from interferometric phase-locked arrays of AlGaAs/GaAs diode lasers

10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern q...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1989-05, Vol.65 (9), p.3716-3718
Hauptverfasser: BOTEZ, D, MAWST, L. J, HAYASHIDA, P, ROTH, T. J
Format: Artikel
Sprache:eng
Schlagworte:
420300 - Engineering- Lasers- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ENGINEERING
Exact sciences and technology
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFEROMETRY
LASERS
MODE LOCKING
OPTICAL PROPERTIES
Optics
PHYSICAL PROPERTIES
Physics
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
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Beschreibung
Zusammenfassung:10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.342601