High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown th...
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Veröffentlicht in: | IEEE electron device letters 1991-06, Vol.12 (6), p.306-308 |
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Sprache: | eng |
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Zusammenfassung: | A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown that a reverse bias of 42 V or forward bias of 9,3 V is needed to reach a gate current of 1 mA/mm of gate width. A MISFET having a gate of 1.5*600 mu m delivers an output power of 940 mW (1.57-W/mm power density) with 4.4-dB gain and 27.3% power added efficiency at 1.1 GHz. This is the highest power density reported for GaAs-based FETs.< > |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/55.82069 |