High-speed InP/GaInAs heterojunction phototransistor on InP-on-Si grown by organometallic vapor phase epitaxy

We have fabricated the first heterojunction phototransistor (HPT) on InP-on-Si. These phototransistors, based on the InP/GaInAs heterojunction, have optical gains as high as 125 A/W at 1300 nm and dark currents as low as 300 pA, for a 48×64 μm HPT. The bandwidth was determined from impulse photoresp...

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Veröffentlicht in:	Applied physics letters 1991-07, Vol.59 (3), p.268-270
Hauptverfasser:	AINA, O, SERIO, M, MATTINGLY, M, O'CONNOR, J, SHASTRY, S. K, HILL, D. S, SALERNO, J. P, FERM, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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