High-speed InP/GaInAs heterojunction phototransistor on InP-on-Si grown by organometallic vapor phase epitaxy

High-speed InP/GaInAs heterojunction phototransistor on InP-on-Si grown by organometallic vapor phase epitaxy

We have fabricated the first heterojunction phototransistor (HPT) on InP-on-Si. These phototransistors, based on the InP/GaInAs heterojunction, have optical gains as high as 125 A/W at 1300 nm and dark currents as low as 300 pA, for a 48×64 μm HPT. The bandwidth was determined from impulse photoresp...

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Veröffentlicht in:Applied physics letters 1991-07, Vol.59 (3), p.268-270
Hauptverfasser: AINA, O, SERIO, M, MATTINGLY, M, O'CONNOR, J, SHASTRY, S. K, HILL, D. S, SALERNO, J. P, FERM, P
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:We have fabricated the first heterojunction phototransistor (HPT) on InP-on-Si. These phototransistors, based on the InP/GaInAs heterojunction, have optical gains as high as 125 A/W at 1300 nm and dark currents as low as 300 pA, for a 48×64 μm HPT. The bandwidth was determined from impulse photoresponse measurements to be 4.4 GHz. The intrinsic bandwidth was estimated from the zero bias capacitance (0.2 pf) to be as high as 16 GHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105617