High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration

High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching...

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Veröffentlicht in:	Applied physics letters 1991-08, Vol.59 (9), p.1037-1039
Hauptverfasser:	Ou, S. S., Jansen, M., Yang, J. J., Sergant, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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