High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration
High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching...
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Veröffentlicht in: | Applied physics letters 1991-08, Vol.59 (9), p.1037-1039 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.106337 |