High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration

High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching...

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Veröffentlicht in:Applied physics letters 1991-08, Vol.59 (9), p.1037-1039
Hauptverfasser: Ou, S. S., Jansen, M., Yang, J. J., Sergant, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106337