High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration
High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching...
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| Veröffentlicht in: | Applied physics letters 1991-08, Vol.59 (9), p.1037-1039 |
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| container_end_page | 1039 |
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| container_issue | 9 |
| container_start_page | 1037 |
| container_title | Applied physics letters |
| container_volume | 59 |
| creator | Ou, S. S. Jansen, M. Yang, J. J. Sergant, M. |
| description | High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation. |
| doi_str_mv | 10.1063/1.106337 |
| format | Article |
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S.</creatorcontrib><creatorcontrib>Jansen, M.</creatorcontrib><creatorcontrib>Yang, J. J.</creatorcontrib><creatorcontrib>Sergant, M.</creatorcontrib><title>High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration</title><title>Applied physics letters</title><description>High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. 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J.</au><au>Sergant, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration</atitle><jtitle>Applied physics letters</jtitle><date>1991-08-26</date><risdate>1991</risdate><volume>59</volume><issue>9</issue><spage>1037</spage><epage>1039</epage><pages>1037-1039</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.</abstract><doi>10.1063/1.106337</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991-08, Vol.59 (9), p.1037-1039 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25231171 |
| source | AIP Digital Archive |
| title | High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration |
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