Gas pressure sintering of β-silicon nitride
The sintering behaviour of beta-Si3N4 powder was investigated in 980 kPa (10 atm) nitrogen at 1800-2000 C. It is shown that beta-Si3N4 has a higher sinterability than the finer alpha-Si3N4. The solution of small grains and reprecipitation on large grains occurred during sintering at greater than 160...
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Veröffentlicht in: | Journal of materials science 1991-07, Vol.26 (14), p.3940-3944 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The sintering behaviour of beta-Si3N4 powder was investigated in 980 kPa (10 atm) nitrogen at 1800-2000 C. It is shown that beta-Si3N4 has a higher sinterability than the finer alpha-Si3N4. The solution of small grains and reprecipitation on large grains occurred during sintering at greater than 1600 C. The rate determining step in the liquid-phase sintering is believed to be the diffusion of material through the liquid phase at grain boundaries. There was no abnormal grain growth during gas pressure sintering of beta-Si3N4. The microstructures of gas pressure sintered materials from beta-Si3N4 were more uniform that those from alpha-Si3N4. The densification mechanism of beta-Si3N4 is discussed in relation to that of alpha-Si3N4. 22 refs. |
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ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/BF01184995 |