Forward-bias conduction of Schottky diodes on polysilicon thin films
An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bu...
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| Veröffentlicht in: | IEEE transactions on electron devices 1989-07, Vol.36 (7), p.1311-1317 |
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| container_end_page | 1317 |
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| container_issue | 7 |
| container_start_page | 1311 |
| container_title | IEEE transactions on electron devices |
| container_volume | 36 |
| creator | Verghese, S. Hauser, J.R. Wortman, J.J. Kerns, S.E. |
| description | An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data.< > |
| doi_str_mv | 10.1109/16.30937 |
| format | Article |
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Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data.< ></description><subject>Applied sciences</subject><subject>Conductivity</subject><subject>Crystallization</subject><subject>Diodes</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Grain boundaries</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Testing</subject><subject>Thermionic emission</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqN0D1PwzAQBmALgUQpSKxsWUAsAZ8df42oUECqxADMluPYqiGNi50K9d8TSAUr0-nuHr3Di9Ap4CsArK6BX1GsqNhDE2BMlIpXfB9NMAZZKirpITrK-W1YeVWRCbqdx_RpUlPWweTCxq7Z2D7Eroi-eLbL2Pfv26IJsXG5GK7r2G5zaMMAi34ZusKHdpWP0YE3bXYnuzlFr_O7l9lDuXi6f5zdLEpLKevL2hKoHJWyYhYEUOpqWjdgqPHAnHDKYylEXVvg0tlGeCmIsgIUZhI72dApuhhz1yl-bFzu9Spk69rWdC5usiaMEExk9R8ISgg2wMsR2hRzTs7rdQork7YasP7uUwPXP30O9HyXabI1rU-msyH_ecWJFIoP7mx0wTn3-x4zvgCbjHwq</recordid><startdate>19890701</startdate><enddate>19890701</enddate><creator>Verghese, S.</creator><creator>Hauser, J.R.</creator><creator>Wortman, J.J.</creator><creator>Kerns, S.E.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>19890701</creationdate><title>Forward-bias conduction of Schottky diodes on polysilicon thin films</title><author>Verghese, S. ; Hauser, J.R. ; Wortman, J.J. ; Kerns, S.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-bc214e38845c17133eb3bd1a3af15e7e9f0877bbc168ecd7f8729c7190580e8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Applied sciences</topic><topic>Conductivity</topic><topic>Crystallization</topic><topic>Diodes</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Grain boundaries</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Semiconductor electronics. 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Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.30937</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1989-07, Vol.36 (7), p.1311-1317 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25219775 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Conductivity Crystallization Diodes Doping Electronics Exact sciences and technology Grain boundaries Schottky barriers Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Thermionic emission Transistors Voltage |
| title | Forward-bias conduction of Schottky diodes on polysilicon thin films |
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